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Wavelength 354.7 nm
Average Power 1 - 5 W
Energy per Pulse < 200 μJ
Mode (M²) TEMoo (M² < 1.3)
Beam Diameter (1/e²) See Chart
Pulse to Pulse Stability (30 - 100 kHz) < 15%
Power Stability (8 hrs. at const. temp.) < 5%
Ellipticity < 10%
Astigmatism < 0.3
MARKING PERFORMANCE
Marking Accuracy < 1.5 mrad
Marking Repeatability < 22 μrad
ELECTRICAL
Input Voltage 90 - 240 VAC
Power Consumption (max.) 900 W
Ambient Temp. (non-condensing) 10 - 35° C
PHYSICAL
용도:
Laser Marking
Solar Cell Processing
Thick/Thin Film Laser Trimming
ITO Removal
Sapphire Scribing
Micromachining
Direct Write/Repair
Micro-via Hole Drilling
Wafer processing
Polyimide Cutting & Drilling
PFA Teflon Marking
Photo Bleaching